smd type transistors 2SC5212 features low collector saturation voltage v ce(sat) =0.2v typ. high f t f t =180mhz typ. excellent linearity of dc forward current gain. high collector current i cm =1a. small package for mounting. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 25 v emitter-base voltage v ebo 4v collector-emitter voltage v ceo 20 v peak collector current i cm 1a collector current i c 700 ma collector dissipation p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit colllector-base breakdown voltage v (br)cbo i c =10a,i e =0 25 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 4 v collector-emitter breakdown voltage v (br)ceo i c =100a,r be = 20 v collector cutoff current i cbo v cb =25v,i e =0 1 a emitter cutoff current i ebo v eb =2v,i c =0 1 a dc current gain h fe v ce =4v,i c =100ma 150 800 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =25ma 0.2 0.5 v gain bandwidth product f t v ce =6v,i e =-10ma 180 mhz h fe classification marking ue uf ug hfe 150 300 250 500 400 800 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type product specification 4008-318-123
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